High performance n+/p and p+/n germanium diodes at low-temperature activation annealing
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 2011
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.11.001